Silicon Carbide 2008 - Materials, Processing and Devices: Volume 1069

Silicon Carbide 2008 - Materials, Processing and Devices: Volume 1069


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Silicon carbide (SiC) is a robust semiconductor material being actively developed for high-power and high-temperature applications, especially in the field of power electronics and sensors for harsh environments. This book, the fifth in a continuing series, focuses on SiC growth, defects, and devices. New developments in the growth of bulk SiC single-crystal materials, advances in the epitaxial growth of SiC, and progress in the characterization of materials properties and defects in SiC are featured. The volume also highlights the development of devices manufactured on this wide-bandgap semiconductor including: innovative device designs; characterization of device and materials properties; and improvements in wide-bandgap processing technology.

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Product Details

ISBN-13: 9781605110394
Publisher: Cambridge University Press
Publication date: 07/31/2008
Series: MRS Proceedings
Pages: 283
Product dimensions: 6.20(w) x 9.30(h) x 0.80(d)

Table of Contents

Part I. Bulk Material and Characterization; Part II. Epitaxial Material and Characterization; Part III. Device Processing and Characterization; Author index; Subject index.

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