Nanometer CMOS

Nanometer CMOS

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This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.

Product Details

ISBN-13: 9781000045246
Publisher: Jenny Stanford Publishing
Publication date: 02/28/2010
Sold by: Barnes & Noble
Format: NOOK Book
Pages: 350
File size: 9 MB

About the Author

Juin J Liou, Frank Schwierz, Hei Wong

Table of Contents

The Evolution of Silicon Electronics
The Early Days of Semiconductor Electronics
Moore’s Law
Further trends and the ITRS
Improved MOSFET Designs
MOSFETs for High-Frequency Operation?

MOS Fundamentals
MOSFET Current— Voltage Characteristics

Nanoscale MOSFETs
MOSFET Scaling Theory
Nanoscale MOSFET Concepts — An Overview
Nanoscale Bulk MOSFETs
Mobility Enhancement Techniques
High-k Dielectrics and Metal Gates
Nanoscale Single-Gate SOI MOSFETs
Nanoscale Multiple-Gate MOSFETs
MOSFETs with Alternative Channel Materials
The Effect of Multiple Technology Boosters

MOSFETs for RF Applications
RF Transistor Figures of Merit
Small-Signal Equivalent Circuits
RF MOSFET Design and Performance

Overview of Nanometer CMOS Technology
Plasma Etching
Thin Film Formation Techniques
Junction Formation

Critical Scaling Issues
Will There Be a Mainstream Beyond-Scaling, Post-CMOS Technology?

Appendix A:
Frequently Used Symbols
Appendix B: Physical Constants and Unit Conversions
Appendix C: Important Properties of Si and SiO₂
Appendix D: Carrier Concentrations, Energy, and Potential
Appendix E: Frequently Used Abbreviations

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